IPP083N10N5 - MOSFET

Datasheet Summary

Features

Ideal for high frequency switching and sync. rec.
Excellent gate charge x RDS(on) product (FOM).
Very low on-resistance RDS(on).
N-channel, normal level.
100% avalanche tested.
Pb-free plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	IPP083N10N5
Manufacturer	Infineon
File Size	1.76 MB
Description	MOSFET
Datasheet	IPP083N10N5 Datasheet
Additional preview pages of the IPP083N10N5 datasheet.

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,100V IPP083N10N5 DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 8.3 mΩ ID 73 A Qoss 40 nC QG(0V..

Published: Feb 17, 2016 |