IPP084N06L3 - N-Channel MOSFET

Datasheet Summary

Features

br>.
Static drain-source on-resistance: RDS(on) ≤8.4mΩ.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

📥 Download Datasheet

Datasheet Details

Part number	IPP084N06L3
Manufacturer	INCHANGE
File Size	242.49 KB
Description	N-Channel MOSFET
Datasheet	IPP084N06L3 Datasheet
Additional preview pages of the IPP084N06L3 datasheet.

📁 Similar Datasheet

IPP084N06L3 - Power-Transistor (Infineon)
IPP084N06L3G - Power-Transistor (Infineon Technologies)
IPP080N03L - Power-Transistor (Infineon)
IPP080N03LG - Power-Transistor (Infineon)
IPP080N06NG - Power-Transistor (Infineon Technologies)
IPP081N06L3G - Power-Transistor (Infineon Technologies)
IPP082N10N3G - Power-Transistor (Infineon Technologies)
IPP082N10NF2S - MOSFET (Infineon)
IPP083N10N5 - MOSFET (Infineon)
IPP085N06LG - Power-Transistor (Infineon Technologies)

Other Datasheets by INCHANGE

IPP080N03L - N-Channel MOSFET
IPP083N10N5 - N-Channel MOSFET
IPP086N10N3 - N-Channel MOSFET
IPP015N04N - N-Channel MOSFET
IPP020N06N - N-Channel MOSFET
IPP023N04N - N-Channel MOSFET
IPP023NE7N3 - N-Channel MOSFET
IPP024N06N3 - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP084N06L3，IIPP084N06L3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 200 PD Total Dissipation @TC=25℃ 79 Tj Max.

Published: Oct 2, 2020 |