IPP08CN10NG - Power-Transistor

This page provides the datasheet information for the IPP08CN10NG, a member of the IPB-08CN Power-Transistor family.

Datasheet Summary

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on).
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon Technologies

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Datasheet Details

Part number	IPP08CN10NG
Manufacturer	Infineon Technologies
File Size	563.42 KB
Description	Power-Transistor
Datasheet	IPP08CN10NG Datasheet
Additional preview pages of the IPP08CN10NG datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com IPB08CN10N G IPI08CN10N G IPP08CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO263) ID 100 8.

Published: Apr 9, 2008 |