Datasheet Details
| Part number | 2N5684 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 137.25 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet |
 2N5684 Datasheet
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| Part number | 2N5684 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 137.25 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet |
2N5684 Datasheet
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·High DC Current Gain-hFE=15~60@IC = -25A ·Low Saturation Voltage- VCE(sat)= -1.0V(Max)@ IC = -25A APPLICATIONS ·Designed for use in high power amplifer and switching circuits applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -50 A IB Base Current-Continuous -15 A PC Collector Power Dissipation @TC=25℃ -300 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.584 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2N5684 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise
INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N5684 | PNP Transistor | ON Semiconductor |
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2N5684 | PNP High Power Silicon Transistor | VPT |
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2N5684 | NPN POWER SILICON TRANSISTOR | Microsemi |
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2N5684 | High-Current Complementary Silicon Power Transistors | Motorola |
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