Datasheet Details
| Part number | 2N5344 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 73.05 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
 2N5344 Datasheet
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| Part number | 2N5344 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 73.05 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
2N5344 Datasheet
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·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= -250V(Min) ·High Switching Speed ·High Current-Gain Bandwidth Product: fT= 60MHz(Min)@ IC= -0.1A APPLICATIONS ·Designed for high voltage switching and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PD TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Total Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE -250 -250 -5 -1.0 -0.5 40 200 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 4.38 UNIT ℃/W isc Website：www.iscsemi.cn www.DataSheet4U.net INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEX IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= -10mA ;
IB= 0 IC= -1A;
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N5344 | Bipolar PNP Device | Seme LAB |
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2N5344A | Bipolar PNP Device | Seme LAB |
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