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2N5039 Datasheet Silicon NPN Power Transistors

Manufacturer: Inchange Semiconductor

General Description

¡¤With TO-3 package ¡¤High speed ¡¤Low collector saturation voltage APPLICATIONS ¡¤They are especially intended for high current and fast switching applications PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=¡æ ) SYMBOL VCBO PARAMETER 2N5038 Collector-base voltage 2N5039 2N5038 VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage 2N5039 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25¡æ Open collector Open base 75 7 20 30 5 140 200 -65~200 ¡æ ¡æ V A A A W Open emitter 120 90 V CONDITIONS VALUE 150 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.25 UNIT ¡æ/W Free Datasheet http://www.datasheet4u.com/ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5038 2N5039 CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter sustaining voltage 2N5038 IC=0.2A ;IB=0 2N5039 2N5038 2N5039 IC=12A ;IB=1.2A 1.0 IC=10A ;IB=1A IC=20A ;IB=5A IC=20A ;IB=5A IC=12A ;

VCE=5V 1.8 2N5039 2N5038 ICEO Collector cut-off current 2N5039 2N5038 ICEX Collector cut-off current 2N5039 2N5038 IEBO Emitter cut-off current 2N5039 hFE-1 DC current gain 2N5038 hFE-2 DC current gain 2N5039 Is/b Second breakdown collector current IC=10A ;

VCE=5V VCE=28V, VCE=45V(t=1.0s Nonrepetitive) 5 0.9 A IC=2A ;

Overview

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5038.