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2N5301 Datasheet Silicon NPN Power Transistors

Manufacturer: Inchange Semiconductor

General Description

With TO-3 package Complement to type 2N4398/4399/5745 Low collector/saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications.

PINNING PIN 1 2 3 DESCRIPTION Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5301 VCBO Collector-base voltage 2N5302 2N5303 2N5301 VCEO Collector-emitter voltage 2N5302 2N5303 VEBO Emitter-base voltage IC Collector current 2N5301/5302 2N5303 IB Base current PD Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 40 60 80 40 60 80 5 30 20 7.5 200 200 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance junction to case VALUE 0.875 UNIT /W Inchange Semiconductor Silicon NPN Power Transistors Product Specification 2N5301 2N5302 2N5303 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage 2N5301 2N5302 2N5303 IC=0.2A ;IB=0 VCEsat-1 Collector-emitter saturation voltage 2N5301/5302 2N5303 IC=10A;

IB=1A VCEsat-2 Collector-emitter saturation voltage 2N5301/5302 2N5303 IC=20A ;IB=2A IC=15A ;IB=1.5A VCEsat-3 Collector-emitter saturation voltage 2N5301/5302 2N5303 IC=30A ;IB=6A IC=20A ;IB=4A VBEsat-1 Base-emitter saturation voltage IC=10A;

Overview

Inchange Semiconductor Silicon NPN Power Transistors Product Specification 2N5301 2N5302.