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2N5240 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

General Description

·High Voltage- : VCEO(SUS)= 300V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and high-voltage bridge amplifiers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCER(SUS) Collector-Emitter Voltage RBE≤50Ω VCEO(SUS) Collector-Emitter Voltage 375 V 350 V 300 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 5A IB Base Current Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2 100 200 -65~200 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.75 ℃/W isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N5240 ELECTRICAL CHAR

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.