Datasheet4U Logo Datasheet4U.com

MMIX4G20N250 - High Voltage IGBT

Key Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 4000V~ Electrical Isolation.
  • High Peak Current Capability.
  • Low Saturation Voltage.
  • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages.
  • High Power Density.
  • Easy to Mount.

📥 Download Datasheet

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
MMIX4B12N300 Bipolar MOS Transistor
MMIX4B20N300 Bipolar MOS Transistor
MMIX4B22N300 Monolithic Bipolar MOS Transistor
MMIX1F230N20T Power MOSFET
MMIX1F44N100Q3 Power MOSFET
MMIX1G75N250 High Voltage IGBT
MMIX1X200N60B3H1 Extreme Light Punch Through IGBT
MMIX1Y100N120C3H1 High-Speed IGBT
MMIX1Y25N250CV1 High Voltage IGBT
MMIX2F150N20T Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
High Voltage IGBT For Capacitor Discharge Applications ( Electrically Isolated Tab) H-Bridge Configuration MMIX4G20N250 C1 G1 E1C3 G3 Q1 Q2 Q3 Q4 C2 G2 E2C4 G4 E3E4 Symbol V CES VCGR V GES VGEM I C25 IC90 I CM SSOA (RBSOA) PC TJ TJM Tstg T SOLD FC V ISOL Weight Test Conditions T = 25°C to 150°C J TJ = 25°C to 150°C, RGE = 1M Continuous Transient T = 25°C C TC = 90°C T = 25°C, V = 19V, 1ms C GE 10ms VGE= 15V, TVJ = 125°C, RG = 20 Clamped Inductive Load TC = 25°C Plastic Body for 10 seconds Mounting Force 50/60Hz, 1 Minute Maximum Ratings 2500 V 2500 V ± 20 V ± 30 V 23 A 14 A 105 A 55 A ICM = 60 A 1500 V 100 W -55 ... +150 °C 150 °C -55 ... +150 °C 260 °C 50..200 / 11..45 Nm/lb.in.