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MMIX1G75N250 - High Voltage IGBT

Key Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation High Peak Current Capability Low Saturation Voltage Molding Epoxies Meet UL 94 V-0 Flammability Classification.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage IGBT For Capacitor Discharge Applications Advance Technical Information MMIX1G75N250 VCES = IC90 = VCE(sat) ≤ 2500V 65A 2.9V ( Electrically Isolated Tab) C Symbol VCES VCES VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 2500 V 2500 V ± 20 V ± 30 V TC = 25°C TC = 90°C TC = 25°C, VGE = 20V, 1ms 110 A 65 A 580 A VGE= 15V, TVJ = 125°C, RG = 1Ω ICM = 200 A Clamped Inductive Load VCE < 0.8 • VCES TC = 25°C 430 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062 in.) from Case for 10s 260 °C 50/60Hz, 1 minute 2500 V~ Mounting Force 50..200 / 11..45 N/lb.