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MMIX1Y25N250CV1 - High Voltage IGBT

Key Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Heatsink Surface.
  • 2500V~ Electrical Isolation.
  • Anti-Parallel Diode.
  • High Current Handling Capability Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 2500 V VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V ICES VCE = VCES, VGE = 0V Note 2, TJ = 100C 25 μA 100 μA IGES VCE = 0V, VGE = ± 20V ±100 nA VCE(sat) IC = 25A, VGE.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage XPTTM IGBT w/ Diode (Electrically Isolated Tab) Advance Technical Information MMIX1Y25N250CV1 VCES = IC110 = VCE(sat)  2500V 18A 4.0V C Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 2500 V 2500 V ±20 V ±30 V TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load 36 A 18 A 14 A 270 A ICM = 100 A 1500 V TC = 25°C 230 W -55 ... +175 °C 175 °C -55 ... +175 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 300 °C 260 °C 50/60Hz, 1 minute 2500 V~ Mounting Force 50..200/11..45 N/lb.