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MMIX1X200N60B3H1 - Extreme Light Punch Through IGBT

Key Features

  • E = Emitter z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Optimized for Low Conduction and Switching Losses z Avalanche Rated z Short Circuit Capability z Very High Current Capability z Square RBSOA Advantages z High Power Density z Low Gate Drive Requirement.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 (Electrically Isolated Tab) Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC110 = V ≤ CE(sat) tfi(typ) = 600V 72A 1.7V 110ns C Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.