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MMIX1F230N20T - Power MOSFET

Key Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~).
  • 175°C Operating Temperature.
  • Very High Current Handling Capability.
  • Fast Intrinsic Diode.
  • Avalanche Rated.
  • Very Low RDS(on) Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information GigaMOSTM TrenchTM HiperFETTM Power MOSFET (Electrically Isolated Tab) MMIX1F230N20T N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = ID25 = RDS(on)  trr  200V 156A 8.3m 200ns D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  175C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute Mounting Force Maximum Ratings 200 V 200 V 20 V 30 V 156 A 630 A 100 A 5 J 600 W 20 V/ns -55 ... +175 C 175 C -55 ...