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IXTQ170N10P - Power MOSFET

Download the IXTQ170N10P datasheet PDF. This datasheet also covers the IXTT170N10P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z International Standard Packages z Fast Intrinsic Rectifier z Avalanche Rated z Low RDS(ON) and QG z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTT170N10P_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTT170N10P IXTQ170N10P IXTK170N10P Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264 & TO-3P) TO-268 TO-3P TO-264 Maximum Ratings 100 V 100 V ± 20 V ± 30 V 170 A 160 A 350 A 60 A 2 J 10 V/ns 715 W -55 to +175 °C +175 °C -55 to +175 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 4.0 g 5.5 g 10.
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