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IXGT28N120BD1 - High Voltage IGBT

Download the IXGT28N120BD1 datasheet PDF. This datasheet also covers the IXGH28N120BD1 variant, as both devices belong to the same high voltage igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • z International Standard Packages JEDEC TO-247AD & TO-268 z IGBT and Anti-Parallel FRED for Resonant Power Supplies - Induction Heating - Rice Cookers z MOS Gate Turn-On z Fast Recovery Expitaxial Diode (FRED) - Soft Recovery with Low IRM Advantages z Saves Space (Two Devices in One Package) z Easy to Mount with 1 Screw (Isolated Mounting Screw Hole) z Reduces Assembly Time and Cost.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH28N120BD1-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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High Voltage IGBT w/ Diode IXGH28N120BD1 IXGT28N120BD1 VCES = IC25 = VCE(sat) ≤ tfi(typ) = 1200V 50A 3.5V 170ns TO-247AD (IXGH) Symbol VCES VCGR VGES VGEM IC25 IC100 IF90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C ( Chip Capability ) TC = 100°C TC = 90°C TC = 25°C, 1ms VGE= 15V, TJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Mounting Torque (TO-247) TO-247 TO-286 Maximum Ratings 1200 V 1200 V ±20 V ±30 V 50 A 28 A 10 A 150 A ICM = 120 A 0.8 • VCES 250 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 6 4 Nm/lb.in.
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