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IXGT20N100 - IGBT

Features

  • °C G = Gate, E = Emitter, C E C (TAB) C = Collector, TAB = Collector Maximum Lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) 1.13/10 Nm/lb. in. TO-247 AD TO-268 6 4 g g.
  • International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD.
  • High current handling capability.
  • MOS Gate turn-on - drive simplicity.

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IGBT IXGH 20N100 IXGT 20N100 VCES IC25 VCE(sat) tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg www.DataSheet.co.kr Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 47 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 40 20 80 ICM = 40 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A TO-268 (IXGT) G E (TAB) TO-247 AD (IXGH) G W °C °C °C °C Features °C G = Gate, E = Emitter, C E C (TAB) C = Collector, TAB = Collector Maximum Lead temperature for soldering 1.6 mm (0.062 in.
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