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IXGT25N160 - High Voltage IGBT

Download the IXGT25N160 datasheet PDF. This datasheet also covers the IXGH25N160 variant, as both devices belong to the same high voltage igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • High peak current capability Low saturation voltage MOS Gate turn-on -drive simplicity Rugged NPT structure International standard packages - JEDEC TO-268 and - JEDEC TO-247 AD Molding epoxies meet UL 94 V-0 flammability classification.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH25N160_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGT25N250 High Voltage IGBT
IXGT25N250HV High Voltage IGBT
IXGT20N100 IGBT
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Full PDF Text Transcription

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High Voltage IGBT For Capacitor Discharge Applications Preliminary Data Sheet IXGH 25N160 IXGT 25N160 VCES = 1600 V IC25 = 75 A VCE(sat) = 2.5 V www.DataSheet4U.com Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, VGE = 20 V, 1 ms VGE = 15 V, TVJ = 125°C, RG = 20 Ω Clamped inductive load TC = 25°C Maximum Ratings 1600 1600 ± 20 ± 30 75 25 200 ICM = 100 @ 0.8 VCES 300 -55 ... +150 150 -55 ...
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