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IXGT20N120B - High Voltage IGBT

Features

  • z High Voltage IGBT for resonant power supplies - Induction heating - Rice cookers z International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD z Low switching losses, low V(sat) z MOS Gate turn-on - drive simplicity Advantages BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 µA, VGE = 0 V = 250 µA, VCE = VGE z z z VCE = VCES VCE = 0 V, VGE = ±20 V IC = 20A, VGE = 15 V High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) © 2.

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Full PDF Text Transcription

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High Voltage IGBT Preliminary Data Sheet IXGH 20N120B VCES IXGT 20N120B IC25 VCE(sat) tfi(typ) = 1200 = 40 = 3.4 = 160 V A V ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load TC = 25°C Maximum Ratings 1200 1200 ± 20 ± 30 40 20 80 ICM = 80 @ 0.8 VCES 190 -55 ... +150 www.DataSheet.co.kr V V V V A A A A TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C (TAB) C E W °C °C °C °C °C G = Gate, E = Emitter, 150 300 260 C = Collector, TAB = Collector -55 ... +150 Maximum Lead temperature for soldering 1.6 mm (0.062 in.
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