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IXGT24N170AH1 - High Voltage IGBT

Download the IXGT24N170AH1 datasheet PDF. This datasheet also covers the IXGH24N170AH1 variant, as both devices belong to the same high voltage igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Optimized for Low Conduction and Switching Losses z Anti-Parallel Ultra Fast Diode z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH24N170AH1-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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High Voltage IGBTs w/Diode Preliminary Technical Information IXGH24N170AH1 IXGT24N170AH1 VCES = IC25 = VCE(sat) ≤ tfi(typ) = 1700V 24A 6.0V 40ns TO-247 (IXGH) Symbol VCES VCGR VGES VGEM IICC2950 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1700 1700 ± 20 ± 30 V V V V TTCC = 25°C = 90°C TC = 25°C, 1ms 24 16 75 VCGlaEm=p1e5dVI,nTdVuJc=tiv1e25L°oCa,dRG = 10Ω 0.I8CM• = 50 VCES TJ = 125°C, VCE = 1200V, VGE = 15V, RG = 22Ω 10 TC = 25°C 250 -55 ... +150 150 -55 ... +150 A A A A V μs W °C °C °C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds 300 °C 260 °C Mounting Torque (TO-247) 1.13/10 Nm/lb.in.
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