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IXGT28N120B - High Voltage IGBT

Download the IXGT28N120B datasheet PDF. This datasheet also covers the IXGH28N120B variant, as both devices belong to the same high voltage igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Voltage IGBT for resonant power supplies - Induction heating - Rice cookers International standard packages JEDEC TO-268 and JEDEC TO-247 AD Low switching losses, low V(sat) MOS Gate turn-on - drive simplicity Advantages BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 µA , VGE = 0 V = 250 µA, VCE = VGE VCE = VCES, VGE= 0 V VCE = 0 V, VGE = ±20 V IC = 28A, VGE = 15 V High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) © 2004 IXYS All.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH28N120B_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGT28N30 HiPerFAST IGBT
IXGT28N30A HiPerFAST IGBT
IXGT28N30B HiPerFAST IGBT
IXGT28N60B Ultra-low V Ce(sat) Igbt
IXGT28N60BD1 Low VCE(sat) IGBT

Full PDF Text Transcription

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www.DataSheet4U.com High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load TC = 25°C Maximum Ratings 1200 1200 ± 20 ± 30 50 28 150 ICM = 120 @ 0.8 VCES 250 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C (TAB) C E W °C °C °C °C °C G = Gate, E = Emitter, C = Collector, TAB = Collector Maximum Lead temperature for soldering 1.6 mm (0.062 in.
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