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IXGH64N60B3 - Medium speed low Vsat PT IGBT

Features

  • z Optimized for low conduction and switching losses z Square RBSOA z International standard packages Advantages z High power density z Low gate drive requirement.

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Full PDF Text Transcription

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Preliminary Technical Information GenX3TM 600V IGBT Medium speed low Vsat PT IGBTs for 5 - 40kHz switching IXGH64N60B3* IXGT64N60B3 *Obsolete Part Number VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 64A 1.8V 88ns Symbol Test Conditions VCES VCGR VGES VGEM IC110 ICM SSOA (RBSOA) TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped inductive load @ ≤ 600V PC TJ TJM Tstg TL TSOLD Md Weight TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247) TO-247 TO-268 Maximum Ratings 600 V 600 V ± 20 V ± 30 V 64 A 400 A ICM = 200 A 460 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 5 W °C °C °C °C °C Nm/lb.in.
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