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IXGH60N30C3 - High Speed IGBT

Features

  • z High Frequency IGBT z Square RBSOA z High avalanche capability z Drive simplicity with MOS Gate Turn-On z High current handling capability.

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Full PDF Text Transcription

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Advance Technical Information GenX3TM 300V IGBT IXGH60N30C3 High Speed IGBTs for 50-150kHz switching V= CES IC110 = V ≤ CE(sat) t = fi typ 300V 60A 1.8V 70ns Symbol VCES VCGR VGES VGEM IC25 I C110 ICM IA EAS SSOA (RBSOA) PC T J TJM Tstg T L TSOLD M d Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Limited by leads) T C = 110°C (chip capability) TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TVJ = 125°C, RG = 5Ω Clamped inductive load @ ≤ 300V TC = 25°C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Mounting torque (TO-247) Maximum Ratings 300 V 300 V ±20 V ±30 V 75 A 60 A 420 A 60 A 400 mJ ICM = 170 A 300 -55 ... +150 150 -55 ... +150 300 260 1.
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