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IXGH60N60C3 - High Speed PT IGBT

Features

  • z z z z G C E Tab G = Gate E = Emitter C = Collector Tab = Collector Optimized for Low Switching Losses Square RBSOA Avalanche rated International Standard Package Advantages z z High Power Density Low Gate Drive Requirement.

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Full PDF Text Transcription

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GenX3TM 600V IGBT High Speed PT IGBT for 40-100kHz Switching IXGH60N60C3 VCES IC110 VCE(sat) tfi (typ) = = ≤ = 600V 60A 2.5V 50ns TO-247 AD Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C Maximum Ratings 600 600 ±20 ±30 75 60 360 40 400 ICM = 125 VCE ≤ VCES 380 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 V V V V A A A A mJ A W °C °C °C °C °C Nm/lb.in.
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