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IXGH60N60C3D1 - High Speed PT IGBT

Features

  • z Optimized for Low Switching Losses z Square RBSOA z High Avalanche Capability z Anti-Parallel Ultra Fast Diode z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement.

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Full PDF Text Transcription

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GenX3TM 600V IGBTs IXGH60N60C3D1 with Diode IXGT60N60C3D1* *Obsolete Part Number High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = V ≤ CE(sat) tfi (typ) = 600V 60A 2.5V 50ns TO-247 (IXGH) Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C, (Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 600 V 600 V ±20 V ±30 V 75 A 60 A 26 A 300 A 40 A 400 mJ ICM = 125 A ≤ VCE VCES 380 W -55 ...
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