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IXGH60N60B2 - IGBT

Features

  • z G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268 SMD 1.13/10 Nm/lb. in. 6 4 g g z z z Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity.

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Full PDF Text Transcription

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www.DataSheet4U.com Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching IXGH 60N60B2 IXGT 60N60B2 VCES IC25 VCE(sat) tfi typ = 600 V = 75 A < 1.8 V = 100 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600 V TC = 25°C Maximum Ratings 600 600 ±20 ±30 75 60 300 ICM = 150 500 -55 ... +150 150 -55 ...
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