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IXFK24N120Q2 - HiPerFET Power MOSFET

Download the IXFK24N120Q2 datasheet PDF. This datasheet also covers the IXFX24N120Q2 variant, as both devices belong to the same hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 5.0 ± 200 TJ = 25°C TJ = 125°C 50 2 0.65 V V nA µA mA Ω z z VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V z z Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier Advantages z.

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Note: The manufacturer provides a single datasheet file (IXFX24N120Q2_IXYS.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFK24N100F HiPerRF Power MOSFETs
IXFK24N100Q3 Power MOSFET
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IXFK200N10P Polar HiPerFET Power MOSFET

Full PDF Text Transcription

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Advance Technical Data www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class IXFK 24N120Q2 IXFX 24N120Q2 VDSS = 1200 V = 24 A ID25 RDS(on) = 0.65 Ω trr ≤ 300 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-264 PLUS-247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 1200 1200 ± 30 ± 40 24 96 12 30 4.0 20 830 -55 ... +150 150 -55 ...
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