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IXFK24N80P - PolarHV HiPerFET Power MOSFET

Download the IXFK24N80P datasheet PDF. This datasheet also covers the IXFH24N80P variant, as both devices belong to the same polarhv hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • D = Drain Tab = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 800 3.0 5.0 ±100 25 1000 400 V V nA μA μA mΩ z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH24N80P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFK20N120 HiPerFET Power MOSFETs
IXFK20N120P Power MOSFET
IXFK20N80Q Power MOSFET
IXFK21N100F Power MOSFET
IXFK220N15P Polar Power MOSFET HiperFET

Full PDF Text Transcription

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 24N80P IXFK 24N80P IXFT 24N80P VDSS = 800 V ID25 = 24 A RDS(on) ≤ 400 mΩ ≤ 250 ns trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 800 800 ±30 ±40 24 55 12 50 1.5 10 650 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J TO-247 (IXFH) G D S D (TAB) TO-268 (IXFT) Case Style G V/ns W °C °C °C S D (TAB) TO-264 AA (IXFK) Mounting torque (TO-247 & TO-264) TO-247 TO-268 TO-264 1.6 mm (0.062 in.
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