Datasheet4U Logo Datasheet4U.com

IXFK20N120P - Power MOSFET

Features

  • Fast Intrinsic Diode.
  • Dynamic dv/dt Rating.
  • Avalanche Rated.
  • Low RDS(ON) and QG.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFK200N10P Polar HiPerFET Power MOSFET IXYS
IXFK210N17T GigaMOS Power MOSFET IXYS
IXFK210N17T GigaMOS Power MOSFET IXYS
IXFK21N100Q HiPerFET Power MOSFET IXYS
IXFK230N20T GigaMOS Power MOSFET IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFK20N120 HiPerFET Power MOSFETs
IXFK20N80Q Power MOSFET
IXFK21N100F Power MOSFET
IXFK220N15P Polar Power MOSFET HiperFET
IXFK220N17T2 GigaMOS TrenchT2 HiperFET Power MOSFET

Full PDF Text Transcription

Click to expand full text
PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK20N120P IXFX20N120P D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1200 V 1200 V  30 V  40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C 20 A 50 A 10 A 1 J IS  IDM, VDD  VDSS, TJ  150C TC = 25C 15 780 -55 ... +150 150 -55 ... +150 V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Torque (TO-264) Mounting Force (PLUS247) 1.13/10 20..120 /4.5..27 Nm/lb.
Published: |