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IXFK21N100Q - HiPerFET Power MOSFET

Download the IXFK21N100Q datasheet PDF. This datasheet also covers the IXFX21N100Q variant, as both devices belong to the same hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • IXYS advanced low Qg process.
  • Low gate charge and capacitances - easier to drive - faster switching.
  • International standard packages.
  • Low RDS (on).
  • Rated for unclamped Inductive load switching (UIS) rated.
  • Molding epoxies meet UL 94 V-0 flammability classification.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFX21N100Q_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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www.DataSheet4U.com HiPerFET TM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C IXFK 21N100Q IXFX 21N100Q VDSS = 1000 V ID25 = 21 A RDS(on)= 0.50 Ω trr ≤ 250 ns PLUS 247TM (IXFX) Maximum Ratings 1000 1000 ± 20 ± 30 21 84 21 60 2.5 10 500 -55 ... +150 150 -55 ... +150 300 0.4/6 6 10 V V V V A A A mJ J V/ns W °C °C °C °C Nm/lb.in.
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