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IXFK24N100F - HiPerRF Power MOSFETs

Download the IXFK24N100F datasheet PDF. This datasheet also covers the IXFX24N100F variant, as both devices belong to the same hiperrf power mosfets family and are provided as variant models within a single manufacturer datasheet.

Features

  • l l D = Drain TAB = Drain l 0.4/6 Nm/lb. in. 6 10 g g l RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFX24N100F_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFK24N100Q3 Power MOSFET
IXFK24N120Q2 HiPerFET Power MOSFET
IXFK24N90Q HiPerFET Power MOSFET
IXFK240N15T2 GigaMOS TrenchT2 HiperFET Power MOSFET
IXFK200N10P Polar HiPerFET Power MOSFET

Full PDF Text Transcription

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Advance Technical Information www.DataSheet4U.com HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFX 24N100F VDSS = 1000 V IXFK 24N100F ID25 = 24 A RDS(on) = 0.39 Ω trr ≤ 250 ns PLUS 247TM (IXFX) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 1000 1000 ± 20 ± 30 24 96 24 60 3.0 10 560 -55 ... +150 150 -55 ...
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