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IXFK140N30P - Power MOSFET

Datasheet Summary

Features

  • Fast intrinsic diode.
  • Avalanche Rated.
  • Low RDS(ON) and QG.
  • Low package inductance Advantages z Easy to mount z Space savings z High power density.

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Datasheet preview – IXFK140N30P

Datasheet Details

Part number IXFK140N30P
Manufacturer IXYS
File Size 150.73 KB
Description Power MOSFET
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PolarTM Power MOSFET HiPerFETTM IXFK140N30P IXFX140N30P N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode VDSS = ID25 = ≤ RDS(on) t rr ≤ 300V 140A 24mΩ 200ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting force (PLUS247) Mounting torque (TO-264) PLUS247 TO-264 Maximum Ratings 300 V 300 V ±20 V ±30 V 140 A 75 A 300 A 70 A 5 J 20 1040 -55 ... +150 150 -55 ... +150 300 260 20..120/4.5..27 1.
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