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PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode
IXFK 120N25P IXFX 120N25P
VDSS = ID25 = RDS(on) = trr <
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250 V 120 A 24 mΩ 200 ns
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
Maximum Ratings 250 250 ± 20 ± 30 120 75 300 60 60 2.5 10 700 -55 ... +175 175 -55 ... +150 V V V V
TO-264(SP) (IXFK)
G
A A A A mJ J V/ns W °C °C °C °C
D
(TAB) S
PLUS247 (IXFX)
G = Gate S = Source
(TAB) D = Drain TAB = Drain
1.6 mm (0.062 in.
IXFK120N25P Datasheet
