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Preliminary Technical Information
PolarHTTMHiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK 140N20P
VDSS = 200 V ID25 = 140 A RDS(on) = 18 mΩ ≤ 150 ns trr
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Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
Maximum Ratings 200 200 ±20 ±30 140 75 280 60 100 4 10 800 -55 ... +175 175 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C
TO-264(SP) (IXFK)
G
D
(TAB) S
G = Gate S = Source
D = Drain TAB = Drain
Features
z z
1.
IXFK140N20P Datasheet
