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Advance Technical Information
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HiPerFETTM Power MOSFETs
Single MOSFET Die
IXFX 120N25 IXFK 120N25
VDSS ID25
RDS(on)
= 250 V = 120 A = 22 mΩ
trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC TC TC TC = 25°C (MOSFET chip capability) = 104°C (External lead capability) = 25°C, pulse width limited by TJM = 25°C
Maximum Ratings 250 250 ± 20 ± 30 120 75 480 90 64 3 5 560 -55 ... +150 150 -55 ...
IXFK120N25 Datasheet
