Click to expand full text
Advance Technical Information
www.DataSheet4U.com
GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK120N30T IXFX120N30T
RDS(on) ≤ ≤ trr
TO-264 (IXFK)
VDSS ID25
= =
300V 120A 24mΩ 200ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 300 300 ± 20 ± 30 120 330 30 2.5 20 960 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. N/lb. g g
G = Gate S = Source (TAB) D = Drain TAB = Drain
G D S
(TAB)
PLUS247 (IXFX)
1.6mm (0.062 in.
IXFK120N30T Datasheet
