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IXTQ250N075T - Power MOSFET

Download the IXTQ250N075T datasheet PDF. This datasheet also covers the IXTH250N075T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH250N075T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTQ250N075T N-ChannelMOSFET INCHANGE
IXTQ200N06P N-ChannelMOSFET INCHANGE
IXTQ200N06P Power MOSFET IXYS
IXTQ200N075T N-ChannelMOSFET INCHANGE
IXTQ200N085T N-ChannelMOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTQ200N075T Power MOSFET
IXTQ200N085T Power MOSFET
IXTQ200N10T Power MOSFET
IXTQ220N055T Power MOSFET
IXTQ220N075T Power MOSFET

Full PDF Text Transcription

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Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH250N075T IXTQ250N075T VDSS = ID25 = RDS(on) ≤ 75 250 4.0 V A mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 3.3 Ω TC = 25° C 1.6 mm (0.062 in.
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