Datasheet4U Logo Datasheet4U.com

IXTQ200N10T - Power MOSFET

Download the IXTQ200N10T datasheet PDF. This datasheet also covers the IXTH200N10T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International standard packages 175°C Operating Temperature Avalanche Rated Low RDS(on) Advantages Easy to mount Space savings High power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH200N10T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTQ200N10T N-ChannelMOSFET INCHANGE
IXTQ200N06P N-ChannelMOSFET INCHANGE
IXTQ200N06P Power MOSFET IXYS
IXTQ200N075T N-ChannelMOSFET INCHANGE
IXTQ200N085T N-ChannelMOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTQ200N075T Power MOSFET
IXTQ200N085T Power MOSFET
IXTQ220N055T Power MOSFET
IXTQ220N075T Power MOSFET
IXTQ230N085T Power MOSFET

Full PDF Text Transcription

Click to expand full text
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH200N10T IXTQ200N10T Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque TO-247 TO-3P Maximum Ratings 100 100 V V ± 30 V 200 A 75 A 500 A 40 A 1.5 J 550 W -55 ... +175 175 -55 ... +175 300 260 1.13 / 10 °C °C °C °C °C Nm/lb.in. 6.0 g 5.
Published: |