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IXTQ230N085T - Power MOSFET

Download the IXTQ230N085T datasheet PDF. This datasheet also covers the IXTH230N085T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C RDS(on) VGS = 10 V, ID = 50 A, Notes 1, 2 Characteristic Values Min. Typ. Max. 85 V 2.0 4.0 V ± 200 nA 5 mA 250 mA 3.7 4.4 mW Advantages Eas.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH230N085T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTQ23N60Q Power MOSFETs Q-Class
IXTQ200N075T Power MOSFET
IXTQ200N085T Power MOSFET
IXTQ200N10T Power MOSFET
IXTQ220N055T Power MOSFET

Full PDF Text Transcription

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Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH230N085T IXTQ230N085T VDSS = ID25 = RDS(on) ≤ 85 230 4.4 V A mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤IDM, di/dt ≤100 A/ms, VDD ≤VDSS TJ ≤175°C, RG = 3.3Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque TO-3P TO-247 Maximum Ratings 85 V 85 V G DS (TAB) ± 20 230 75 520 40 1.0 3 V A A A A J V/ns TO-3P (IXTQ) G D S (TAB) 550 -55 ... +175 175 -55 ...
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