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Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH220N055T IXTQ220N055T
VDSS = ID25 =
RDS(on) ≤
55 220 4.0
V A mΩ
TO-247 (IXTH)
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque
TO-3P TO-247
Maximum Ratings
55 V 55 V
G DS
(TAB)
± 20
220 75
600
25 1.0
3
V
A A A
A J
V/ns
TO-3P (IXTQ) G D S
(TAB)
430
-55 ... +175 175
-55 ...
IXTQ220N055T Datasheet
