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IXTQ220N075T - Power MOSFET

Download the IXTQ220N075T datasheet PDF. This datasheet also covers the IXTH220N075T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 Characteristic Values Min. Typ. Max. 75 V 2.0 4.0 V ± 200 nA 5 μA 250 μA 3.6 4.5 mΩ Advantages Easy to mou.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH220N075T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTQ220N055T Power MOSFET
IXTQ200N075T Power MOSFET
IXTQ200N085T Power MOSFET
IXTQ200N10T Power MOSFET
IXTQ230N085T Power MOSFET

Full PDF Text Transcription

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Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH220N075T IXTQ220N075T VDSS = ID25 = RDS(on) ≤ 75 220 4.5 V A mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 3.3 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque TO-3P TO-247 75 75 ± 20 220 75 600 25 1.0 VG V DS V A TO-3P (IXTQ) A A A J (TAB) 3 480 -55 ... +175 175 -55 ...
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