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IXTQ200N075T - Power MOSFET

Download the IXTQ200N075T datasheet PDF. This datasheet also covers the IXTH200N075T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density © 2006 IXYS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH200N075T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTQ200N075T N-ChannelMOSFET INCHANGE
IXTQ200N06P N-ChannelMOSFET INCHANGE
IXTQ200N06P Power MOSFET IXYS
IXTQ200N085T N-ChannelMOSFET INCHANGE
IXTQ200N10T N-ChannelMOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTQ200N085T Power MOSFET
IXTQ200N10T Power MOSFET
IXTQ220N055T Power MOSFET
IXTQ220N075T Power MOSFET
IXTQ230N085T Power MOSFET

Full PDF Text Transcription

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Preliminary Technical Information Trench Gate Power MOSFET IXTH200N075T IXTQ200N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 200 5.0 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque TO-3P TO-247 Maximum Ratings 75 75 ± 20 200 75 540 25 750 V V V A A A A mJ 3 V/ns 430 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 5.
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