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IXTQ180N085T - Power MOSFET

Download the IXTQ180N085T datasheet PDF. This datasheet also covers the IXTH180N085T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages 175°C Operating Temperature Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advantages Easy to Mount Space Savings High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH180N085T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTQ180N085T N-ChannelMOSFET INCHANGE
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IXTQ182N055T N-ChannelMOSFET INCHANGE
IXTQ18N60P Power MOSFET IXYS
IXTQ18N60P N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTQ180N055T (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET
IXTQ180N10T Power MOSFET
IXTQ182N055T Power MOSFET
IXTQ100N25P N-Channel MOSFET
IXTQ110N055P PolarHT Power MOSFET

Full PDF Text Transcription

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TrenchMVTM Power MOSFET IXTH180N085T IXTQ180N085T N-Channel Enhancement Mode Avalanche rated Fast Intrinsic Rectifier VDSS = 85V ID25 = 180A ≤RDS(on) 5.5mΩ TO-247 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247&TO-3P) TO-247 TO-3P Maximum Ratings 85 85 V V ±20 V 180 A 75 A 480 A 25 A 1.0 J 430 W -55 to +175 +175 -55 to +175 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6.0 g 5.
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