Datasheet4U Logo Datasheet4U.com

IXTQ180N055T - (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET

Download the IXTQ180N055T datasheet PDF. This datasheet also covers the IXTP180N055T variant, as both devices belong to the same (ixtp180n055t / ixta180n055t / ixtq180n055t) trench gate power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 1 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 55 2.0 4.0 ±200 1 250 3.3 4.0 V Advantages z V nA µA µA mΩ z z Easy to mount Space savings High power density VGS = 10 V, ID =.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTP180N055T_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IXTQ180N055T
Manufacturer IXYS (Littelfuse)
File Size 117.16 KB
Description (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET
Datasheet download datasheet IXTQ180N055T Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXTQ180N085T N-ChannelMOSFET INCHANGE
IXTQ180N10T N-ChannelMOSFET INCHANGE
IXTQ182N055T N-ChannelMOSFET INCHANGE
IXTQ18N60P Power MOSFET IXYS
IXTQ18N60P N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTQ180N085T Power MOSFET
IXTQ180N10T Power MOSFET
IXTQ182N055T Power MOSFET
IXTQ100N25P N-Channel MOSFET
IXTQ110N055P PolarHT Power MOSFET

Full PDF Text Transcription

Click to expand full text
Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 180N055T IXTA 180N055T IXTP 180N055T VDSS ID25 RDS(on) = 55 V = 180 A = 4.0 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 55 55 ± 20 V V V TO-220 (IXTP) 180 75 600 75 1.0 3 360 -55 ... +175 175 -55 ... +150 A A A A G (TAB) G D S (TAB) TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C J V/ns W °C °C °C °C °C G = Gate S = Source D S TO-263 (IXTA) G S (TAB) D = Drain TAB = Drain 1.6 mm (0.062 in.
Published: |