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IXTP7N60PM - Power MOSFET

Download the IXTP7N60PM datasheet PDF. This datasheet also covers the IXTA7N60PM variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • g V V Ω r e . n a ww 600 3.0 TJ = 125°C ua 300 260 1.13/10 2.5 Characteristic Values Min. Typ. Max. 5.5 1.1 - 55 +150 150 - 55 +150 ce. °C °C °C °C °C Nm/lb. in. Plastic overmolded tab for electrical isolation International standard package Avanlanche rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA7N60PM-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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Preliminary Technical Information PolarTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA7N60PM IXTP7N60PM VDSS ID25 RDS(on) = 600V = 4A ≤ 1.1Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C Maximum Ratings 600 600 8 c T ± 30 ± 40 4 14 V V A A 7 400 10 A mJ t e n 41 om D S W Features g V V Ω r e .n a ww 600 3.0 TJ = 125°C ua 300 260 1.13/10 2.5 Characteristic Values Min. Typ. Max. 5.5 1.1 - 55 ... +150 150 - 55 ... +150 ce. °C °C °C °C °C Nm/lb.in.
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