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IXTP7N60PM - N-Channel MOSFET

Features

  • Drain Source Voltage- : VDSS= 600V(Min).
  • Static drain-source on-resistance : RDS(on) ≤ 1.1Ω@VGS=10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor IXTP7N60PM ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 1.
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