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IXTP70N085T - Power MOSFET

Download the IXTP70N085T datasheet PDF. This datasheet also covers the IXTA70N085T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA70N085T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTP70N085T N-Channel MOSFET INCHANGE
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IXTP75N10P N-Channel MOSFET IXYS
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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTP76N075T Power MOSFET
IXTP7N60PM Power MOSFET
IXTP01N100D N-Channel MOSFET
IXTP02N50D High Voltage MOSFET
IXTP05N100 Power MOSFET

Full PDF Text Transcription

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTA70N085T IXTP70N085T N-Channel Enhancement Mode Avalanche Rated VDSS = 85 ID25 RDS(on) = ≤ 70 13.5 V A mΩ Symbol VDSS VDGR VGSM ID25 IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 10 Ω TC = 25°C 1.6 mm (0.062 in.
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