Datasheet4U Logo Datasheet4U.com

IXTP76N075T - Power MOSFET

Download the IXTP76N075T datasheet PDF. This datasheet also covers the IXTA76N075T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA76N075T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTP76N075T N-Channel MOSFET INCHANGE
IXTP76N25T N-Channel MOSFET INCHANGE
IXTP76N25T Power MOSFET IXYS
IXTP76P10T Power MOSFET IXYS
IXTP70N075T2 Power MOSFET IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTP70N085T Power MOSFET
IXTP7N60PM Power MOSFET
IXTP01N100D N-Channel MOSFET
IXTP02N50D High Voltage MOSFET
IXTP05N100 Power MOSFET

Full PDF Text Transcription

Click to expand full text
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA76N075T IXTP76N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 V 76 A 12 mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 10 Ω TC = 25°C 1.6 mm (0.062 in.
Published: |