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PolarHVTM Power MOSFET
IXTA 7N60P IXTP 7N60P
N-Channel Enhancement Mode Avalanche Rated
VDSS = 600 V
ID25
=
7A
RDS(on) ≤ 1.1 Ω
Symbol
VDSS V
DGR
VGS VGSM
ID25 IDM I
AR
EAR EAS
dv/dt
PD TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions
TJ = 25° C to 175° C
T J
=
25°
C
to
175°
C;
R GS
=
1
MΩ
Continuous Transient
TC = 25° C TC = 25° C, pulse width limited by TJM
T C
= 25° C
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS,
T J
≤150°
C,
R G
=
18
Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque (TO-220)
TO-220 TO-263
Maximum Ratings TO-220 (IXTP)
600
V
600
V
±30
V
±40
V
G DS
7
A
14
A TO-263 (IXTA)
7
A
20
mJ
400
mJ
10
V/ns
G S
(TAB) (TAB)
150
W
-55 ... +150
°C
150
°C
-55 ...
IXTP7N60P Datasheet
