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IXFN360N10T - GigaMOS Trench HiperFET Power MOSFET

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Features

  • z z z z z z 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA t = 1 Minute t = 1 Second 300 260 2500 3000 1.5/13 1.3/11.5 30 Mounting Torque Terminal Connection Torque International Standard Package 175°C Operating Temperature High Current Handling Capability Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advantages z z z Weight Easy to Mount Space Savings High Power Density Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th.

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Datasheet Details

Part number IXFN360N10T
Manufacturer IXYS Corporation
File Size 195.37 KB
Description GigaMOS Trench HiperFET Power MOSFET
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GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFN360N10T VDSS ID25 RDS(on) trr = = ≤ ≤ 100V 360A 2.6mΩ 130ns miniBLOC, SOT-227 E153432 S G Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD VISOL Md www.DataSheet4U.net Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C Maximum Ratings 100 100 ±20 ±30 360 200 900 100 3 830 20 -55 ... +175 175 -55 ... +175 V V V V A A A A J W V/ns °C °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in.
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