Datasheet4U Logo Datasheet4U.com

IXFN26N120P - Polar Power MOSFET

Features

  • International standard package.
  • Encapsulating epoxy meets UL 94 V-0, flammability classification.
  • miniBLOC with Aluminium nitride isolation.
  • Fast recovery diode.
  • Unclamped Inductive Switching (UIS) t = 1min t = 1s rated.
  • Low package inductance Mounting torque Terminal connection torque - easy to drive and to protect Advantages.
  • Easy to mount.
  • Space savings.
  • High power density Weight Symbol Test Conditions (.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFN26N90 HiPerFET Power MOSFETs Single Die MOSFET IXYS
IXFN260N17T GigaMOS Power MOSFET IXYS
IXFN200N06 HiPerFET Power MOSFETs IXYS
IXFN200N07 HiPerFET Power MOSFETs IXYS
IXFN200N10P Polar HiPerFET Power MOSFET IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFN26N100P Polar Power MOSFET HiPerFET
IXFN20N120 HiPerFET Power MOSFETs
IXFN20N120P Polar Power MOSFET HiPerFET
IXFN230N10 Power MOSFET
IXFN23N100 (IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET

Full PDF Text Transcription

Click to expand full text
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA www.DataSheet4U.net IXFN26N120P VDSS ID25 RDS(on) trr = = ≤ ≤ 1200V 23A 460mΩ 300ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1200 1200 ± 30 ± 40 23 60 13 1.5 20 695 -55 ... +150 150 -55 ... +150 300 2500 3000 1.5/13 1.3/11.5 30 V V V V A A A J V/ns W °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in.
Published: |